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Profile
| Academic position | Full Professor |
|---|---|
| Research fields | Semiconductor Physics,Medical Physics, Biomedical Engineering |
| Keywords | Photothermik, Thermische Wellen, Halbleiter, Biomedizin, Zerstörungsfreie Diagnostik |
Current contact address
| Country | Canada |
|---|---|
| City | Toronto |
| Institution | University of Toronto |
| Institute | Department of Mechanical and Industrial Engineering |
Host during sponsorship
| Prof. Dr. Josef Pelzl | Institut für Experimentalphysik III - Physik mit Ionenstrahlen, Ruhr-Universität Bochum, Bochum |
|---|---|
| Prof. Dr. Vasilis Ntziachristos | Institut für Biologische und Medizinische Bildgebung, Helmholtz Zentrum München, Deutsches Forschungszentrum für Gesundheit und Umwelt (GmbH), Oberschleißheim |
| Prof. Dr. Vasilis Ntziachristos | Institute for Biological and Medical Imaging (IBMI), Technische Universität München, Oberschleißheim |
| Start of initial sponsorship | 01/10/2003 |
Programme(s)
| 2001 | Humboldt Research Award Programme |
|---|
Publications (partial selection)
| 2007 | C.-H. Wang A. Mandelis, J. Tolev, B. Burchard and J. Meijer: H+ ion-implantation energy dependence of electronic transport properties in the MeV range in n-type silicon wafers using frequency-domain photocarrier radiometry. In: Journal of Applied Physics, 2007, 123109-1-123109-11 |
|---|---|
| 2007 | Jordan Tolev, Andreas Mandelis and Michal Pawlak: Nonlinear Dependence of Photocarrier Radiometry Signals from p-Si Wafers on Optical Excitation Intensity. In: Journal of the Electrochemical Society, 2007, H983-H994 |
| 2005 | Andreas Mandelis, Jerias Batista, Juergen Gibkes, Michael Pawlak and Josef Pelzl: Noncontacting laser photocarrier radiometric depth profilometry of harmonically modulated band bending in the space-charge layer at doped SiO2-Si interfaces. In: journal of applied physics, 2005, 083507-1-083507-11 |
| 2005 | Andreas Mandelis: Theory of space-charge layer dynamics at oxide-semiconductor interfaces under optical modulation and detection by laser photocarrier radiometry. In: journal of applied physics, 2005, 083508-1-083508-11 |
| 2005 | Andreas Mandelis, Micha Pawlak, Chinhua Wang, Isabel Delgadillo-Holtfort, and Josef Pelzl: Time-domain and lock-in rate-window photocarrier radiometric measurements of recombination processes in silicon . In: Journal of Applied Physics, 2005, 123518-1-123518-13 |
| 2004 | A. Mandelis, M. Pawlak and D. Shaughnessy: Carrier-Density-Wave Transport and Local Internal Electric Field Measurements in Biased Metal-Oxide-Semiconductor n-Si Devices using Contactless Laser Photo-Carrier Radiometry. In: Semiconductor Science and Technology, 2004, 1240-1249 |